inchange semiconductor isc product specification isc silicon npn power transistor 2SC4159 description high collector-emitter breakdown voltage- v (br)ceo = 160v (min) large current capacity complement to type 2sa1606 applications designed for high-voltage switching, af power amplifier, 100w output predrivers. absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage 180 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 6.0 v i c collector current-continuous 1.5 a i cm collector current-peak 3 a p c total power dissipation @ t c =25 15 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4159 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 180 v v (br)ceo collector-emitter breakdown voltage i c = 1ma; r be = 160 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 6 v v ce( sat ) collector-emitter saturation voltage i c = 500ma; i b = 50ma 0.3 v v be( on ) base-emitter on voltage i c = 10ma; v ce = 5v 1.5 v i cbo collector cutoff current v cb = 120v; i e = 0 10 a i ebo emitter cutoff current v eb = 4v; i c = 0 10 a h fe dc current gain i c = 300ma; v ce = 5v 60 200 f t current-gain?bandwidth product i c = 50ma; v ce = 10v 100 mhz c ob output capacitance i e = 0; v cb = 10v; f= 1.0mhz 23 pf switching times t on turn-on time 0.15 s t stg storage time 0.81 s t f fall time i c = 0.5a, r l = 40 , i b1 = -i b2 = 50ma, v cc = -20v; p w = 20 s 0.48 s ? h fe classifications d e 60-120 100-200 isc website www.iscsemi.cn 2
|
